W2t smd transistor datasheet c828

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1Motorola Small–Signal Transistors, FETs and Diodes Device DataGeneral Purpose TransistorsPNP SiliconMAXIMUM RATINGSRatingSymbolValueUnitCollector – Emitter ... 2N3906 General Purpose Transistors PNP Silicon Features • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO 40 Vdc Collector − Base Voltage VCBO 40 Vdc Emitter − Base Voltage VEBO 5.0 Vdc Collector Current − Continuous IC 200 mAdc Total Device Dissipation @ TA = 25°C Derate ...

Begin marking SMD(on top package IC, transistors, diode, etc.) with W Можно еще поискать на этих сайтах: Ссылки на сборники и справочники фирм Sheetsv advanced guestbook 2 3 4

ST 2SC828 / 828A. NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. These transistors are subdivided into three groups Q, R and S according to their DC current gain. On special request, these transistors can be manufactured in different pin configurations.

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The 2SC828 transistor might have a current gain anywhere between 130 and 520. The gain of the 2SC828-Q will be in the range from 130 to 260, 2SC828-R ranges from 180 to 360, 2SC828-S ranges from 260 to 520. 7400 quad 2 input nand gate datasheets360ST 2SC828 / 828A. NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. These transistors are subdivided into three groups Q, R and S according to their DC current gain. On special request, these transistors can be manufactured in different pin configurations. SMD General Purpose Transistor (PNP) www.taitroncomponents.com Page 6 of 9 h PARAMETERS VCE=±10 Vdc, f=1kHz, T A=25 ° C This group of graphs illustrates the relationship betwe en hfe and other h parameters for this series of transistors. To obtain these curves, a high±gain and a low±gain unit were selected from the 2SC1815 4 2003-03-27 TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical Apr 26, 2019 · C Datasheet, PDF – Alldatasheet. Archived from the original on November 21, Invention of the First Transistor”. The junction forward voltage is the voltage applied to the emitter—base junction of a BJT in order to make the base conduct a specified current.

2SC1815 4 2003-03-27 TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical W45 (225) One Watt Darlington Transistors W46 (57) Silicon PIN Photodiode W47 (1118) DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS W48 (73) HIGH POWER NPN SILICON TRANSISTORS W49 (148) HIGH POWER NPN SILICON TRANSISTORS W4A (782) 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories

Mar 08, 2011 · I was just searching Internet for finding a SMD code for a transistor, and I got to this forum, because the code market on the SMD is w2t. Maybe you can answer to my reply here. Hope so. So, in my case I have this inverter board used on computer laptop (the actual model is TF041 DA-1A08 C003A). C9014, C9014 Datasheet, C9014 NPN Small Signal Transistor, buy C9014 Transistor Minority report character summary sheet

W45 (225) One Watt Darlington Transistors W46 (57) Silicon PIN Photodiode W47 (1118) DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS W48 (73) HIGH POWER NPN SILICON TRANSISTORS W49 (148) HIGH POWER NPN SILICON TRANSISTORS W4A (782) 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories Apr 26, 2019 · C Datasheet, PDF – Alldatasheet. Archived from the original on November 21, Invention of the First Transistor”. The junction forward voltage is the voltage applied to the emitter—base junction of a BJT in order to make the base conduct a specified current. W45 (225) One Watt Darlington Transistors W46 (57) Silicon PIN Photodiode W47 (1118) DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS W48 (73) HIGH POWER NPN SILICON TRANSISTORS W49 (148) HIGH POWER NPN SILICON TRANSISTORS W4A (782) 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories

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